Growth of ZnTe and ZnSexTe1-x epilayers and superlattices on GaSb
- 1 October 1990
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- p. 152-158
- https://doi.org/10.1117/12.20830
Abstract
We present photoluminescence (PL) from Te-rich ZnSeTei_ alloys and ZnSeTei_/ZnTe superlattices and discuss the growth of these materials on GaSb epilayers on GaSb substrates. We show that growing ZnTe on GaSb substrates eliminates several bound exciton peaks which occur in ZnTe grown on GaAs. The ZnSeTei_ epilayers show bright luminescence from centers over 100 meV below the expected band edge. PL from ZnSeTe1_ alloys and superlattices is qualitatively very different from PL from CdZni.Te alloys and CdZniTe/ZnTe superlattices .Keywords
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