Influence of accumulation layer on interface trapdensity extraction

10 December 1998

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 34 (25) , 2439-2441
https://doi.org/10.1049/el:19981678

Abstract

The accumulation layer effect in the subthreshold slope of silicon-on-insulator nMOSFETs and in the extraction of the front and back interface trap densities is analysed by simulation. A simple method for minimising this effect is developed and applied experimentally.

Keywords

SIMULATION
SILICON-ON-INSULATOR NMOSFET
ACCUMULATION LAYER
SUBTHRESHOLD SLOPE
PARAMETER EXTRACTION
INTERFACE TRAP DENSITY

This publication has 2 references indexed in Scilit:

SOI Materials
Published by Springer Nature ,1991
Subthreshold slope in thin-film SOI MOSFETs
IEEE Transactions on Electron Devices, 1990