Field effect measurement on silicon and germanium with high frequency current
- 16 February 1971
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 4 (2) , 369-372
- https://doi.org/10.1002/pssa.2210040210
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Großsignal-Feldeffekt zur Oberflächentermbestimmung bei SiliziumPhysica Status Solidi (b), 1966
- Some Measurements of the Surface Properties of Silicon by d.c., a.c. and Pulsed Field EffectsProceedings of the Physical Society, 1962
- Eigenschaften gewöhnlicher HalbleiteroberflächenPhysica Status Solidi (b), 1962
- The effects of dried O2 on the surface conductance of siliconPhysica Status Solidi (b), 1962
- Hysteresis in the Large-Signal Field Effect in Semiconductor SurfacesJournal of the Electrochemical Society, 1962