Effects of Space Charge on Mobility, Diffusion, and Recombination of Minority Carriers
- 15 February 1968
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 39 (3) , 1692-1700
- https://doi.org/10.1063/1.1656417
Abstract
A computer has been used to solve the coupled nonlinear equations, including space charge, that govern the motion of pulses of minority carriers in semiconductors. The advantages of using the computer are that one does not have to assume space‐charge neutrality, and one can treat drift, diffusion, and recombination simultaneously. The use of a mass action recombination law enabled the calculation of the decrease of life‐time with increase in pulse size. The electric field due to a pulse of uncompensated minority carriers was found to decay initially with the dielectric relaxation time, but a small field distortion was found to persist. This space charge influenced the mobility and diffusion of minority carriers. It was found that the decrease in mobility with large pulse size was less severe than predicted by the conventional theory based on charge neutrality. There were indications that diffusion, in the presence of space charge, was also less than that predicted by conventional theory.This publication has 13 references indexed in Scilit:
- Calculations of Electrical Breakdown in Air at Near-Atmospheric PressurePhysical Review B, 1965
- Current Transients in InsulatorsJournal of Applied Physics, 1965
- Two-carrier space-charge-limited current in solids and the dielectric capacitorSolid-State Electronics, 1963
- Current-Carrier Transport with Space Charge in SemiconductorsPhysical Review B, 1961
- Mechanisms of space-charge-limited current in solidsSolid-State Electronics, 1961
- Simplified Theory of Space-Charge-Limited Currents in an Insulator with TrapsPhysical Review B, 1956
- Space-Charge-Limited Currents in SolidsPhysical Review B, 1955
- The Transport of Added Current Carriers in a Homogeneous SemiconductorPhysical Review B, 1953
- The Mobility and Life of Injected Holes and Electrons in GermaniumPhysical Review B, 1951
- Theory of Transient Phenomena in the Transport of Holes in an Excess SemiconductorBell System Technical Journal, 1949