Diffusion Instabilities in Semiconductors
- 15 February 1968
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 39 (3) , 1645-1653
- https://doi.org/10.1063/1.1656409
Abstract
When a strong electric field is applied to a high-conductivity, nearly intrinsic semiconductor, it has been shown that the effective diffusion coefficient may become negative and lead to an instability. The conditions for occurrence of this instability have been investigated in detail, and suitable materials for observation are suggested.This publication has 9 references indexed in Scilit:
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