Near-Bandgap Photoluminescence Decay Time in GaN Epitaxial Layers Grown on Sapphire
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Theory of optical gain in ideal GaN heterostructure lasersApplied Physics Letters, 1995
- Time-resolved exciton luminescence in GaN grown by metalorganic chemical vapor depositionApplied Physics Letters, 1995
- Shallow donors in GaN—The binding energy and the electron effective massSolid State Communications, 1995
- Exciton lifetimes in GaN and GaInNApplied Physics Letters, 1995
- Theoretical prediction of GaN lasing and temperature sensitivityApplied Physics Letters, 1995
- Film Growth of GaN on a c-Axis Oriented ZnO Film Using Reactive Ionized-Cluster Beam Technique and Its Application to Thin Film DevicesJapanese Journal of Applied Physics, 1983
- Spontaneous and Stimulated Recombination Radiation in SemiconductorsPhysical Review B, 1964