Characterization of Defect Structures in SiC Single Crystals Using Synchrotron X-Ray Topography
- 1 January 1993
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Synchrotron white beam topographic imaging in grazing Bragg-Laue geometriesJournal of X-Ray Science and Technology, 1990
- Kinetics and Mechanisms of High-Temperature Creep in Silicon Carbide: I, Reaction-BondedJournal of the American Ceramic Society, 1984
- Single crystal growth of SiC substrate material for blue light emitting diodesIEEE Transactions on Electron Devices, 1983
- Dislocation contrast in X-ray synchrotron topographsJournal of Applied Crystallography, 1977
- On giant screw dislocations in ZnS polytype crystalsPhilosophical Magazine, 1971
- Polymorphism and Polytypism in CrystalsPhysics Today, 1967
- X-Ray Topographic Observation of Dislocation Contrast in Thin CdS CrystalsJournal of Applied Physics, 1965
- CXL. Dislocations in thin platesJournal of Computers in Education, 1951
- Capillary equilibria of dislocated crystalsActa Crystallographica, 1951