Energy relaxation of hot electrons driven by intense terahertz fields in two-dimensional semiconductor systems
- 15 September 1998
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 84 (6) , 3425-3427
- https://doi.org/10.1063/1.368504
Abstract
We examine the frequency dependence of the energy relaxation of hot electrons under the influence of an intense oscillatingelectric field of terahertz frequency. The calculated energy-loss rates in a GaAs/AlGaAs heterojunction and two GaAs-based quantum wells exhibit a frequency behavior quite different from that of the widely used Kogan formula. Their ratio shows an unexpected peak at around 0.5–0.6 THz, with a height about 3–10 times of its low-frequency value. This remarkable resonance is a unique indication of the role of the Doppler shift of the phonon frequency.This publication has 11 references indexed in Scilit:
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