Transmission electron microscopy investigation of tin sub-oxide nucleation upon SnO2 deposition on silicon
- 26 February 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (9) , 1207-1208
- https://doi.org/10.1063/1.115970
Abstract
Transmission electron microscopy analysis of tin dioxide films grown by aerosol‐assisted chemical vapor deposition onto oxidized or etched silicon displayed the formation of a sub‐oxide phase that was identified as Sn2O3. Such a phase is observed to disappear upon heat treatment, and is believed to be one of the factors responsible for the instability of tin dioxide films used as gas sensing layers.Keywords
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