Dimensional crossover in the hopping regime induced by an electric field
- 7 May 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 64 (19) , 2293-2296
- https://doi.org/10.1103/physrevlett.64.2293
Abstract
The current-voltage characteristics of indium-oxide films in the activationless-hopping regime exhibit an inflection point at a thickness-dependent electric field. It is argued that this electric field reflects a 2D-3D dimensionality crossover expected of a variable-range-hopping system.Keywords
This publication has 8 references indexed in Scilit:
- Activationless hopping of correlated electrons inn-type GaAsPhysical Review B, 1989
- Interference of Directed Paths in Disordered SystemsPhysical Review Letters, 1989
- Magnetoconductance in the variable-range-hopping regime due to a quantum-interference mechanismPhysical Review B, 1988
- Observation of activationless hopping conductivity in strong electric fieldsSolid State Communications, 1988
- Orbital magnetoconductance in the variable-range–hopping regimePhysical Review Letters, 1988
- Absence of h/e Periodicity of the Aharonov-Bohm Oscillations in Square Metallic LatticesEurophysics Letters, 1987
- Some finite temperature aspects of the Anderson transitionJournal of Physics C: Solid State Physics, 1986
- A percolation treatment of high-field hopping transportJournal of Physics C: Solid State Physics, 1976