AES STUDY OF THE INTERFACE FORMATION IN PECVD SiO2-InSb STRUCTURES
- 1 November 1989
- journal article
- Published by World Scientific Pub Co Pte Ltd in International Journal of Modern Physics B
- Vol. 3 (11) , 1655-1660
- https://doi.org/10.1142/s0217979289001044
Abstract
Semiconductor-insulator structures prepared on InSb substrates by plasma-enchanced chemical vapour deposition of SiO 2 are investigated by means of Auger electron spectroscopy. The chemical composition of the oxide layer and the insulator-InSb interface formation are studied as a function of the deposition temperature. The conditions for the presence of native oxide in the interfacial region are estimated and discussed.Keywords
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