A simple model of the drain saturation voltage dependence with gate voltage for short-channel MOSFETs
- 16 February 1987
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 99 (2) , K149-K153
- https://doi.org/10.1002/pssa.2210990256
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Dependence of channel electric field on device scalingIEEE Electron Device Letters, 1985
- A parametric short-channel MOS transistor model for subthreshold and strong inversion currentIEEE Transactions on Electron Devices, 1984
- Characterization of the Mosfet Operating in Weak InversionPublished by Elsevier ,1978