Epitaxial Growth of ZnSe on GaAs
Open Access
- 1 January 1965
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 112 (6) , 577-580
- https://doi.org/10.1149/1.2423610
Abstract
Zinc selenide has been grown epitaxially on the gallium plane of gallium arsenide substrates. The overgrowth has the ‘111’ orientation of the seed and exhibits an unambiguous Laue pattern. The vapor species was transported to the substrate in a gas stream consisting of argon, hydrogen, hydrogen chloride, and ammonium iodide. Growth rates of 5 µ/hr were usual, and thicknesses of 200µ were attained.Keywords
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