Epitaxial GaP by a semi-sealed dip process for high efficiency red LED's
- 1 February 1972
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 1 (1) , 25-37
- https://doi.org/10.1007/bf02660352
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- GaP RED ELECTROLUMINESCENT DIODES WITH AN EXTERNAL QUANTUM EFFICIENCY OF 7%Applied Physics Letters, 1969
- Test Set to Evaluate the Electroluminescent Efficiency of Noncontacted GaP DiodesReview of Scientific Instruments, 1969
- Gallium Phosphide Double-Epitaxial DiodesJournal of the Electrochemical Society, 1969
- A mechanism causing supersaturation of impurities during semiconductor crystal growthSurface Science, 1964
- The Phosphorous Dissociation Pressure over the System GaP[sub (s)]-Ga[sub (I)]Journal of the Electrochemical Society, 1963