Trapping and transit-time effects in high-frequency operation of space-charge-limited dielectric diodes
- 1 April 1968
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 11 (4) , 491-499
- https://doi.org/10.1016/0038-1101(68)90032-4
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- A high-frequency negative resistance in dielectric diodes with a high density of shallow trapsBritish Journal of Applied Physics, 1967
- Effect of traps distributed in energy over the a.c. response of thin film transistor and dielectric diodeSolid-State Electronics, 1966
- Small-signal Theory of Space-charge-limited Diodes†International Journal of Electronics, 1966
- Theory of thin film transistor operationSolid-State Electronics, 1964
- Characteristics of the dielectric diode and triode at very high frequenciesSolid-State Electronics, 1963
- Characteristics of the space-charge-limited dielectric diode at very high frequenciesSolid-State Electronics, 1961
- Simplified Theory of One-Carrier Currents with Field-Dependent MobilitiesJournal of Applied Physics, 1958
- Simplified Theory of Space-Charge-Limited Currents in an Insulator with TrapsPhysical Review B, 1956
- Space-Charge-Limited Currents in SolidsPhysical Review B, 1955
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952