Microwave Performance of Dual-Gate Cascode MESFET and HEMT Devices with High Gain at Low Noise Levels
- 1 October 1991
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 591-596
- https://doi.org/10.1109/euma.1991.336366
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Comparisons of microwave performance between single-gate and dual-gate MODFETsIEEE Electron Device Letters, 1988
- Dual-gate GaAs FET switchesIEEE Transactions on Electron Devices, 1981