Boron Determination in Silicon by the Nuclear Track Technique
Open Access
- 1 April 1978
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 125 (4) , 654-657
- https://doi.org/10.1149/1.2131518
Abstract
The nuclear track technique was used for the determination of the boron dopant density in silicon. It was found that boron in the range of 1015–1020atoms/cm3 could be detected. The resistivity of the silicon specimens as a function of the boron density determined by the nuclear track technique compares well with the work of Wagner relating resistivity to boron density. The results obtained by the nuclear track technique show some scatter, but in general agree with those determined by the junction capacitance‐voltage method.Keywords
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