Studies of polycrystalline n-GaAs junctions: effects of metal ion chemisorption on the photoelectrochemical properties of n-GaAs/KOH-Se-/2-, n-GaAs/CH3CN-ferrocene+/0, and n-GaAs/Au interfaces
- 1 October 1988
- journal article
- research article
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry
- Vol. 92 (20) , 5766-5770
- https://doi.org/10.1021/j100331a043
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
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- Optical coupling of surface chemistry. Photoluminescent properties of a derivatized gallium arsenide surface undergoing redox chemistryJournal of the American Chemical Society, 1986
- Measurement of the activation barrier for carrier transport at n-gallium arsenide semiconductor/liquid junctionsJournal of the American Chemical Society, 1985