Surface Morphology Improvement of SiC Epitaxy by Sacrificial Oxidation

• 1 February 1998
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 264-268, 367-370
• https://doi.org/10.4028/www.scientific.net/msf.264-268.367

Abstract

Keywords

• ATOMIC FORCE MICROSCOPE (AFM)
• EPITAXY
• RCA CLEAN
• SACRIFICIAL OXIDATION
• SILICON DIOXIDE
• SURFACE DEFECT
• UV OZONE