Far-infrared absorption of pure and hydrogenated-Ge and-Si
- 15 September 1980
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 22 (6) , 2913-2919
- https://doi.org/10.1103/physrevb.22.2913
Abstract
The far-infrared spectra of pure and hydrogenated -Ge and -Si have been measured with a double-beam, optically compensated Fourier-transform method. In addition to the standard TA-LA-LO-TO absorption bands, "critical-point" structures are observed for the TA bands and also their suppression upon hydrogenation. A local mode, attributed to clusters of four hydrogen atoms, appears at the top of the TA band. These results are discussed in the light of lattice-dynamical calculations for mass defect clusters.
Keywords
This publication has 17 references indexed in Scilit:
- Raman scattering in pure and hydrogenated amorphous germanium and siliconJournal of Non-Crystalline Solids, 1979
- Far infrared absorption of a-Ge and a-Ge-Ga alloysSolid State Communications, 1978
- A new version of a Michelson interferometer for Fourier transform infrared spectroscopy∗Infrared Physics, 1978
- Effects of the local configuration on the lattice dynamics of group-IV semiconductorsPhysical Review B, 1976
- Infrared and microwave absorption in amorphous GePhysical Review B, 1976
- Vibrational properties of amorphous Si and GePhysical Review B, 1975
- Infrared vibrational spectra of amorphous Si and GePhysical Review B, 1974
- Far infrared absorption of amorphous GaAs and GeSolid State Communications, 1973
- Far‐infrared absorption in amorphous III‐V compound semiconductorsPhysica Status Solidi (b), 1973
- Raman Spectra of Amorphous Si and Related Tetrahedrally Bonded SemiconductorsPhysical Review Letters, 1971