Bias field and end effects on the switching thresholds of "pseudo spin valve" memory cells
- 1 January 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 33 (5) , 3280-3282
- https://doi.org/10.1109/20.617917
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Micromagnetic study on write operation in submicron magnetic random access memory cellJournal of Applied Physics, 1996
- Micromagnetics of spin valve memory cellsIEEE Transactions on Magnetics, 1996
- Simulation of sub-micron GMR memory cellsIEEE Transactions on Magnetics, 1995