SB-IGFET, II: An ion implanted IGFET using Schottky barriers
- 1 May 1969
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 57 (5) , 812-813
- https://doi.org/10.1109/PROC.1969.7089
Abstract
Insulated-gate field-effect transistors have been made, which combine the advantages inherent to Schottky barrier source and drain electrodes with ion implantation. This device has a self-aligned gate structure achieved by using the thick gate electrode as a mask during the ion implantation process.Keywords
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