Amorphous-crystalline silicon junctions

10 February 1972

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 8 (3) , 75-77
https://doi.org/10.1049/el:19720054

Abstract

High barriers are observed in amorphous-p-type-silicon junctions, resulting in good rectification. No significant barriers are detected in amorphous-n-type-Si junctions. A simple model is also presented to describe the junction.

Keywords

SEMICONDUCTOR JUNCTIONS
HIGH BARRIERS
MODELLING
RECTIFICATION