Surface chemical kinetics during the growth of GaAs by chemical beam epitaxy
- 2 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4) , 136-139
- https://doi.org/10.1016/0022-0248(89)90366-7
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Observations on intensity oscillations in reflection high-energy electron diffraction during chemical beam epitaxyApplied Physics Letters, 1987
- Current understanding and applications of the RHEED intensity oscillation techniqueJournal of Crystal Growth, 1987
- Dynamic RHEED observations of the MBE growth of GaAsApplied Physics A, 1984