Raman Scattering from Localized Vibrational Modes in GaP
- 26 October 1970
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 25 (17) , 1184-1187
- https://doi.org/10.1103/physrevlett.25.1184
Abstract
High-frequency localized vibrational modes of impurities in a III-V compound have been observed by Raman scattering. Three lines from the GaP samples closely correspond to some local modes previously reported in infrared studies, and depolarization measurements tend to confirm their proposed assignments. We describe several attractive features of this method for the study of semiconductor impurities.Keywords
This publication has 15 references indexed in Scilit:
- Infra-red absorption of gallium phosphide containing boronJournal of Physics C: Solid State Physics, 1969
- Vibrational Modes of Defects in GaPJournal of Applied Physics, 1969
- Local Mode Spectra of Li Complexes in GaAsJournal of Applied Physics, 1968
- SITE TRANSFER OF Si IN GaAsApplied Physics Letters, 1968
- Optical Phonons inMixed CrystalsPhysical Review Letters, 1967
- Localized Vibrational Modes of Lithium in Lithium-Diffused p-Type GaAsJournal of Applied Physics, 1967
- Localized vibrational mode absorption of phosphorus in gallium arsenideJournal of Physics and Chemistry of Solids, 1967
- Isoelectronic Traps Due to Nitrogen in Gallium PhosphidePhysical Review B, 1966
- Localized Vibrations of Lithium Complexes in Gallium ArsenidePhysical Review B, 1965
- Localized Vibrations of Phosphorus and Aluminum Impurities in GaSbPhysical Review Letters, 1964