Intersubband electroluminescence from Si/SiGe cascade emitters at terahertz frequencies
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- 26 August 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (9) , 1543-1545
- https://doi.org/10.1063/1.1501759
Abstract
The quantum cascade laser provides one possible method of realizing high efficiency light emitters in indirect band gapmaterials such as silicon.Electroluminescence results from Si/SiGe quantum cascade emitters are presented demonstrating edge emission from heavy-hole to heavy-hole transitions and light-hole to heavy-hole transitions. In surface-normal emission, only light-hole to heavy-hole electroluminescence is observed as predicted by theory. Intersubband emission is demonstrated at 2.9 THz (103 μm wavelength), 8.9 THz (33.7 μm), and 16.2 THz (18.5 μm) from the Si/SiGe quantum cascade heterostructures.Keywords
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