Binding energy of a donor in a quantum-well heterostructure
- 15 November 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 32 (10) , 6904-6906
- https://doi.org/10.1103/physrevb.32.6904
Abstract
The binding energy of a hydrogenic donor in a quantum well is calculated as a function of well width, taking into account the nonparabolicity of the conduction band. The nonparabolicity causes an increase in the binding energy much greater than reported earlier. This increase, which is more pronounced for a deeper well, is attributed to the change in the quantum-well wave function outside the well due to the nonparabolicity. The nonparabolicity effectively increases the well depth, and this increase is larger for larger well depths.Keywords
This publication has 6 references indexed in Scilit:
- Energy levels of a hydrogenic donor in GaAs-GaAlAs quantum well structures in a magnetic fieldSolid State Communications, 1984
- Effect of nonparabolicity on the energy levels of hydrogenic donors in quantum-well structuresPhysical Review B, 1984
- Hydrogenic-impurity ground state inmultiple—quantum-well structuresPhysical Review B, 1983
- Energy levels of hydrogenic impurity states in GaAs-Ga1−xAlxAs quantum well structuresSolid State Communications, 1983
- Energy spectra of donors inquantum well structures in the effective-mass approximationPhysical Review B, 1982
- Hydrogenic impurity states in a quantum well: A simple modelPhysical Review B, 1981