Spin-polarized photoelectrons from semiconductors with chalcopyrite structure: ZnSiAs2 and ZnGeAs2
- 1 May 1979
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (5) , 3687-3690
- https://doi.org/10.1063/1.326322
Abstract
Photoelectron spin polarizations of 50 and 17% have been obtained with the chalcopyrite‐structure semiconductors ZnSiAs2 and ZnGeAs2, respectively, by irradiation with circularly polarized light. A comparison is made with the results obtained from GaAs, which has a zinc‐blende structure. An analysis of the chalcopyrite electron‐level structure shows that polarizations up to 100% can be expected for suitably chosen materials.This publication has 5 references indexed in Scilit:
- Parity non-conservation in inelastic electron scatteringPhysics Letters B, 1978
- Photoemission of spin-polarized electrons from GaAsPhysical Review B, 1976
- Negative electron affinity GaAs: A new source of spin-polarized electronsApplied Physics Letters, 1975
- Direct observation of spin dependent electronic structure of GaAs using spin polarized photoemissionPhysics Letters A, 1975
- GaAs-Cs: A new type of photoemitterSolid State Communications, 1965