A new gate structure vertical-GaAs FET
- 1 June 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 6 (6) , 264-266
- https://doi.org/10.1109/EDL.1985.26120
Abstract
A new vertical-(V-) GaAs FET exhibiting penthode-like characteristics has been developed and realized experimentally by combining reactive ion etching (RIE) and MO-CVD techniques. The unique feature of this device is the use of an insulator/metal/insulator-grating gate embedded in a GaAs single crystal. A comparison of the dc characteristics of the new device with a standard permeable base transistor (PBT) has been carried out. The improved device performance expected from this structure is discussed in detail.Keywords
This publication has 0 references indexed in Scilit: