Electromigration and gold-induced step bunching on the Si(111) surface
- 1 May 1998
- journal article
- Published by Elsevier in Surface Science
- Vol. 401 (1) , 22-33
- https://doi.org/10.1016/s0039-6028(97)00901-1
Abstract
No abstract availableKeywords
This publication has 45 references indexed in Scilit:
- In-situhigh-resolution electron microscopy study on a surface reconstruction of Au-deposited Si at very high temperaturesPhilosophical Magazine A, 1997
- Fluctuations and instabilities of steps in the growth and sublimation of crystalsJournal of Crystal Growth, 1995
- Direct Observation of Electron Charge of Si Atoms on a Si(001) SurfaceJapanese Journal of Applied Physics, 1995
- High atom density in the ‘‘1×1’’ phase and origin of the metastable reconstructions on Si(111)Physical Review Letters, 1994
- Commensurate–incommensurate phase transition between 6×6 and √3×√3 + satellite structures of the Au/Si(111) surfaceJournal of Vacuum Science & Technology A, 1992
- Heating Current Induced Conversion between 2×1 and 1×2 Domains at Vicinal (001) Si Surfaces–Can it be Explained by Electromigration of Si Adatoms?Japanese Journal of Applied Physics, 1990
- Observation of Si(001) Vicinal Surfaces on RHEEDJournal of the Electrochemical Society, 1989
- Electromigration in metalsReports on Progress in Physics, 1989
- Surface diffusion of adsorbatesSurface Science Reports, 1985
- Theory of Thermal GroovingJournal of Applied Physics, 1957