Silicon p-i-n photodetector using internal reflection method

Abstract
A semiconductor photodetector is proposed which makes use of an internal reflection method to enhance the photoresponse. This method is to let the incident light be multiply-reflected in the detector so that a long distance is traveled and most of the photon energy is absorbed by the detector. Theoretical analysis of the steady-state and time-dependent photoresponses for a p-i-n photodetector is presented. The photodetector is found to be particularly useful in detection of light with wavelengths near the intrinsic absorption edge. The photodetectors are fabricated from 4000 Ω.cm n-type, oriented silicon wafers. Both sides of the wafer are polished with one side inclined one-half degree with respect to the other. The p+n junction and the ohmic contact are formed by alloy method. The measured photoresponses for wavelengths of 1.0 and 1.1 µm are in reasonable agreement with the theoretical predictions.

This publication has 0 references indexed in Scilit: