Lattice-distortion-induced amorphization in indented [110] silicon
- 1 March 1999
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 14 (3) , 682-687
- https://doi.org/10.1557/jmr.1999.0093
Abstract
High-resolution transmission electron microscopy (HRTEM) is used to reveal fine structures of amorphous silicon induced by Vickers indentation and its interface with unindented silicon matrix. Deformation microtwins at the interface and continuous transition from lattice structure of crystal into amorphous structure at the interface are observed. Within the amorphous silicon near the periphery of the indented region, there are many clusters characterized by distorted silicon lattice. A possible mechanism of lattice-distortion-induced amorphization at the periphery of indented silicon is suggested. All the indentations are performed at ambient temperature.Keywords
This publication has 19 references indexed in Scilit:
- Analysis of Vickers indentationPublished by Elsevier ,2003
- Direct evidence for microplastic fracture in single-crystal silicon at ambient temperaturePhilosophical Magazine Letters, 1998
- Vickers indentations in glass—II. Comparison of finite element analysis and experimentsActa Metallurgica et Materialia, 1995
- The structure and property characteristics of amorphous/nanocrystalline silicon produced by ball millingJournal of Materials Research, 1995
- Quantum-interference asymmetries in the multiphoton radio-frequency sideband spectra ofFe57Physical Review B, 1994
- Stress-induced amorphization of silicon crystal by mechanical scratchingPhysical Review Letters, 1992
- Crystal data for high-pressure phases of siliconPhysical Review B, 1986
- Static compression of silicon in the [100] and in the [111] directionsJournal of Applied Physics, 1980
- Crystal Structures at High Pressures of Metallic Modifications of Silicon and GermaniumScience, 1963
- Growth of the Cellular Slime Mold Polysphondylium pallidum in a Simple Nutrient MediumScience, 1963