Fabrication and characterization of metal oxide semiconductor capacitor based on layer-by-layer self-assembled thin films

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Abstract
Metal–oxide–semiconductor-capacitor arrays are fabricated on both P and N type silicon wafers using layer-by-layer (LbL) self-assembled insulating layers. The vertical dimension of the self-assembled thin film can be precisely controlled as well as the molecular order. Unlike the conventional process, the LbL self-assembly allows one to obtain the thin films for a semiconductor device with a dramatically lower temperature, lower cost and shorter processing time. The deposited thin film is stable and can grow on any substrate other than silicon. The conventional lithographic technique is employed to pattern the self-assembled thin films, resulting in an extremely high reproducibility. This enables the possibility of industrial applications to fabricate devices with this simplified and versatile technique. A CCD camera was used to produce the image of the pattern, and a white light interferometric microscope was used to measure the dimension and surface roughness of the produced device. The quartz crystal microbalance served to monitor the growth of the self-assembled thin films.

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