Phenomena and Interpretation of the Transients Caused by Temperature Change on Capacitance of Metal-Oxide-Metal Systems

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Abstract
Capacitor-like Al–Al2O3-metal, Ta–Ta2O5-metal, and Ti–TiO2 (anatase)-metal samples are constructed with Au, Ag, and Al counterelectrodes. The capacitance (dielectric constant) of the samples shows reproducible and nonreproducible transients when the temperature is varied. These transients are brought about by the change of a structure in the oxide films. Thus, the structure is examined in connection with crystal (order) and non-crystal (disorder), using electron and X-ray diffractions. It is considered that the transients are based on three processes: temperature-induced disorder caused by a rapid change of temperature; decay process of the disorder to equilibrium at a given temperature; and crystallization caused by heat treatment. In order to explain the transients, a simple model is proposed which is composed of a mixture of crystalline and non-crystalline parts. The mixture is in thermal equilibrium at a given temperature, and the equilibrium is moved by a temperature variation.

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