Fundamental characteristics of the illminating light source using white light-emitting diodes based on InGaN semiconductors
Open Access
- 1 January 2000
- journal article
- Published by Institute of Electrical Engineers of Japan (IEE Japan) in IEEJ Transactions on Fundamentals and Materials
- Vol. 120 (2) , 244-249
- https://doi.org/10.1541/ieejfms1990.120.2_244
Abstract
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