Ion-implanted planar resistors

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Abstract
Boron-ions have been implanted into Silicon to form p-type planar resistors. The resistors have Boron-diffused contacts and the energetic ions were implanted through an approximately 0.2 micron thick thermally grown SiO2-film, on top of which a pattern was etched in an evaporated aluminum layer to define the areas to be implanted. The ion-doses were in the range 1012 cm−2 to 1015 cm−2 with ion-energies 120 keV and 200 keV. All implantations were performed at room temperature and the annealing took place for 15 min in a nitrogen ambient in the temperature range 300–950 °C. Among the results of the investigations are the obtainable range of sheet resistivities, the large-area-homogeneity and the temperature coefficient of resistance (TCR) as a function of the above mentioned parameters.

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