Optically detected magnetic resonance from the DX centre in silicon-doped AlxGa1-xAs
- 10 April 1988
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 21 (10) , L311-L316
- https://doi.org/10.1088/0022-3719/21/10/003
Abstract
A new infrared luminescence feature in AlxGa1-xAs is found to correlate with Si doping. Magnetic resonance signals are detected on this luminescence and on the visible L-bound effective-mass donor-to-acceptor recombination luminescence. An observed resonance line with g=1.95 and the infrared luminescence are explained by a simple model involving the bistable character to the DX centre.Keywords
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