Optical Josephson Effect in Semiconductors
- 21 October 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 77 (17) , 3597-3600
- https://doi.org/10.1103/physrevlett.77.3597
Abstract
The Josephson effect in excitonic systems composed of high-density electron-hole pairs is predicted to arise in coupled semiconductors which are excited by two laser beams. Although an electron-hole pair does not have a net electric charge, this effect arises from the phase difference between excitonic states with a macroscopic quantum coherence which can directly be generated and controlled by two incident laser beams. The tunneling supercurrent of bound electron-hole pairs is observed as the intensity difference between transmitted light beams.Keywords
This publication has 14 references indexed in Scilit:
- Condensation of Indirect Excitons in Coupled AlAs/GaAs Quantum WellsPhysical Review Letters, 1994
- Theory of the decay luminescence spectrum of a Bose-condensed interacting exciton gasPhysical Review B, 1994
- Exciton transport inO: Evidence for excitonic superfluidity?Physical Review Letters, 1993
- Progress in the Bose-Einstein condensation of biexcitons in CuClPhysical Review Letters, 1993
- Properties of a quantum system during the time interval between two measurementsPhysical Review A, 1990
- Electron theory of the optical properties of laser-excited semiconductorsProgress in Quantum Electronics, 1984
- Bose-Einstein statistical properties and condensation of excitonic molecules in CuClPhysical Review B, 1983
- Evidence for Bose-Einstein Statistics in an Exciton GasPhysical Review Letters, 1980
- Condensation effects of excitonsPhysics Reports, 1977
- Supercurrents through barriersAdvances in Physics, 1965