Weak localization effects on spin relaxation of excitons in quantum wells

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Abstract
We have analyzed the effect of weak disorder, originated from impurities and imperfections that scatter excitonic elastically, on spin-relaxation dynamics of excitons in a quantum well, assuming a dominating exchange-induced transition between two optically active exciton states with spin +1 and -1. The quantum interference effects give rise to the characteristic quantum localization corrections to both longitudinal and transverse spin-relaxation rate. These corrections are time dependent and can change sign during a time interval of observation. Similar corrections are also expected for the spin relaxation rate of electrons in the spin splitted conduction band of zinc-blende semiconductors.