Versatile cryostat systems for low-temperature ion-implantation studies
- 1 December 1974
- journal article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 45 (12) , 1537-1541
- https://doi.org/10.1063/1.1686555
Abstract
The design, use, and performance of cryostat systems for ion implantation at temperatures between 7 and 300 K are described. Special features of the cryostat systems are: (i) a trapped-gas heat exchanger; (ii) a sliding gate valve to allow separation from the implantation line vacuum; (iii) a rotatable tail section with optical windows; and (iv) ion-beam location plates. The systems have been used successfully to study the effects of ion implantation into solids at controlled temperatures between 7 and 300 K, and to study isothermal and isochronal annealing of solid materials following implantation at low temperatures.Keywords
This publication has 1 reference indexed in Scilit:
- Evidence for vacancy motion in low temperature ion-planted SiRadiation Effects, 1970