Trap Characteristics In Large Area CCD Image Sensors
- 23 May 1989
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 1071, 213-228
- https://doi.org/10.1117/12.952521
Abstract
Detailed measurements and characterization of trap behavior in large area CCDs have been performed. The effect of these defects is to cause a local decrease in the charge transfer efficiency in the affected pixel. Bias-temperature stressing of the device has lead to the conclusion that the source of the traps is in the dielectric. A model is proposed which can explain all the current data.© (1989) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.Keywords
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