Variation of carrier concentration in Pb0.8Sn0.2Te with annealing and growth temperature
- 21 April 1977
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 10 (6) , L73-L77
- https://doi.org/10.1088/0022-3727/10/6/001
Abstract
Hole concentrations in the range 1016-1018 cm-3 have been achieved controllably in Pb0.8Sn0.2Te by isothermal annealing of bulk crystals and isothermal growth of liquid-phase epitaxial layers at temperatures between 400 and 650 degrees C. At any given temperature, both preparation techniques gave the same carrier concentration suggesting that the results are governed by native defects. The carrier concentration varied exponentially with annealing or growth temperature with an activation energy of 1.2 eV.Keywords
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