‘Clean’ a-Si:H prepared in a UHV system
- 1 July 1984
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 66 (1-2) , 45-50
- https://doi.org/10.1016/0022-3093(84)90296-5
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Amorphous Si prepared in a UHV plasma deposition systemJournal of Non-Crystalline Solids, 1983
- Effects of doping on transport and deep trapping in hydrogenated amorphous siliconApplied Physics Letters, 1983
- Deep electron traps in hydrogenated amorphous siliconPhysical Review B, 1981
- Impurity effects in a-Si:H solar cells due to air, oxygen, nitrogen, phosphine, or monochlorosilane in the plasmaJournal of Applied Physics, 1981
- Effect of annealing on the optical properties of plasma deposited amorphous hydrogenated siliconSolar Energy Materials, 1979
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977