Wafer quality specification for future sub-half-micron ULSI devices
- 2 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Time-dependent-dielectric breakdown of thin thermally grown SiO2filmsIEEE Transactions on Electron Devices, 1985