Surface states at semiconductor-liquid junction
- 1 May 1983
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (5) , 2526-2532
- https://doi.org/10.1063/1.332321
Abstract
Surface states at a junction of n-TiO2 and aqueous solution were studied by means of the capacitance measurement. It appeared that, from the relation between surface-state capacitance and electrode potential, surface states with state density of 8×1012 cm−2 were located at 0.5 eV below the bottom of the conduction band. The electron capture cross section of 2.0×10−19 cm2 was obtained from the frequency dependence of surface-state capacitance. The effect of the UV irradiation of TiO2 on the surface-state capacitance suggested that this surface state originated from adsorbates.This publication has 20 references indexed in Scilit:
- Direct Observation of Surface States at the TiO2 Electrolyte InterfaceJournal of the Electrochemical Society, 1981
- Semiconductor Electrodes: XXXIV . Photoelectrochemistry of p‐Type in Acetonitrile and the CellJournal of the Electrochemical Society, 1981
- Energy-dependent electron-energy-loss spectroscopy: Application to the surface and bulk electronic structure of MgOPhysical Review B, 1980
- The Nature of Surface States on Chemically Modified TiO2 ElectrodesJournal of the Electrochemical Society, 1980
- Photoreduction at illuminated p-type semiconducting silicon photoelectrodes. Evidence for Fermi level pinningJournal of the American Chemical Society, 1980
- Observation of charge-transfer-controlled photocurrent at the Ti-electrolyte interfacePhysical Review B, 1980
- Observation and Analysis of Surface States on TiO2 Electrodes in Aqueous ElectrolytesJournal of the Electrochemical Society, 1980
- The Potential Distribution at the TiO2 Aqueous Electrolyte InterfaceJournal of the Electrochemical Society, 1979
- Thermodynamic Potential for the Anodic Dissolution of n-Type SemiconductorsJournal of the Electrochemical Society, 1977
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952