Formation of High‐Quality Nitrided Silicon Dioxide Films Using Electron‐Cyclotron Resonance Chemical Vapor Deposition with Nitrous Oxide and Silane

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Abstract
High‐quality silicon dioxide films with nitrogen at the interface have been produced by plasma‐enhanced chemical vapor deposition using an electron‐cyclotron resonance source with silane and nitrous oxide. The nitride layer, which amounts to approximately one monolayer, is produced by a plasma nitridation process that dominates over chemical vapor deposition during the initial stages of growth. X‐ray photoelectron spectroscopy has been used to show that the nitrogen atoms are bonded to three silicon atoms and the N‒O bond concentration is below the detection limit. Fourier transform infrared spectroscopy indicates that the films have excellent bulk properties. Interface state densities of have been obtained by capacitance‐voltage analysis of aluminum capacitors. We discuss the prospects for reducing this level by optimizing the process.

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