Improvement of crystal quality and laser characteristics by zero net strain structure
- 1 December 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 145 (1-4) , 892-897
- https://doi.org/10.1016/0022-0248(94)91159-2
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Design criteria for structurally stable, highly strained multiple quantum well devicesApplied Physics Letters, 1994
- Low threshold FS-BH laser on p -InP substrate grown by all-MOCVDElectronics Letters, 1992
- High-frequency modulation in characteristics in 1.5 μm compressively strained multiquantum well lasers with large number of wellsElectronics Letters, 1992
- Zero-net-strain and conventionally strained InGaAsp/InP multiquantum well lasersElectronics Letters, 1992
- Wide bandwidth multiple quantum well 1.55 μm lasersElectronics Letters, 1991
- Misfit strain relaxation in GexSi1−x/Si heterostructures: The structural stability of buried strained layers and strained-layer superlatticesJournal of Applied Physics, 1990
- High-speed InGaAsP constricted-mesa lasersIEEE Journal of Quantum Electronics, 1986