An edge contact type cell for Phase Change RAM featuring very low power consumption

1 March 2004

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 175-176
https://doi.org/10.1109/vlsit.2003.1221142

Abstract

In this paper, the Phase Change Random Access Memory (PRAM, also known as Ovonic Unified Memory-OUM) cell, which has an extremely small and reproducible contact area and improved thermal environment, was fabricated and electrically characterized. The memory cell successfully operates with 30 ns pulses of 0.20 mA for RESET (high resistive) state and 0.13 mA for SET (low resistive) state. This is the best record of the published data.

Keywords

PHASE CHANGE RANDOM ACCESS MEMORY
ENERGY CONSUMPTION
LITHOGRAPHY
ELECTRODES
CONTACTS
THRESHOLD VOLTAGE
SPACE VECTOR PULSE WIDTH MODULATION
PULSE MEASUREMENTS
MOON
RANDOM ACCESS MEMORY

This publication has 0 references indexed in Scilit: