Characterization of Device Isolation in GaAs MESFET Circuits by Boron Implantation

• 1 March 1987
• journal article
• Published by The Electrochemical Society in Journal of the Electrochemical Society
• Vol. 134  (3) , 711-714
• https://doi.org/10.1149/1.2100537

Abstract

Keywords

• GALLIUM ARSENIDE
• HEAT TREATMENT
• PHYSICAL PROPERTIES
• ELECTRIC CONDUCTIVITY
• ION IMPLANTATION
• ARSENIC
• SEMICONDUCTOR DEVICES
• INTEGRATED CIRCUIT
• MATERIALS SCIENCE