Preparation and characterization of low-resistivity ZnS for blue LED's

1 July 1977

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 24 (7) , 956-958
https://doi.org/10.1109/T-ED.1977.18858

Abstract

A method for reproducible preparation of low-resistivity ZnS crystals is described. The use of a graphite crucible for the Zn-Al treatment of the crystals is found to be effective for the purpose. Resistivity as low as 10 Ω .cm can be obtained reproducibly by the treatment at 1000°C for 10 hr. Blue photoluminescence enhanced by such a low-resistivity treatment is also discussed.

Keywords

CONDUCTIVITY
HEAT TREATMENT
TEMPERATURE
PHOTOLUMINESCENCE
ETCHING
CRYSTALS